6978 Mosfet

6978 Mosfet Datasheet Pdf
6978 Mosfet Board
6978 Mosfet Motor

Type Designator: FQD5N15

FQD5N15 Datasheet (PDF) 0.1. Fqd5n15tf fqd5n15tm.pdf Size:808K fairchildsemi. October 2008QFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.3A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Single N-Channel 150 V 42 mOhm 40 nC HEXFET® Power Mosfet - D2PAK IRFS4615 - 12V-300V N-Channel Power MOSFET MOSFET, N-CH, 150V, 33A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0345ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS.

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 4.3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm

Package: TO252

FQD5N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQD5N15 Datasheet (PDF)

0.1. fqd5n15tf fqd5n15tm.pdf Size:808K _fairchild_semi

October 2008QFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.3A, 150V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.4 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especial

0.2. fqd5n15.pdf Size:840K _fairchild_semi

November 2013FQD5N15N-Channel QFET MOSFET150 V, 4.3 A, 800 m Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.3 A, 150 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary ID = 2.15 Aplanar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 5.4 nC)MOSFET technology has been especially tai

9.1. fqd5n20ltf fqd5n20ltm fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

October 2008QFETFQD5N20L / FQU5N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology is especia

9.2. fqd5n60ctf fqd5n60ctm fqd5n60c fqu5n60c fqu5n60ctu.pdf Size:636K _fairchild_semi

October 2008QFETFQD5N60C / FQU5N60C 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 6.5 pF)This advanced technology has been especia

9.3. fqd5n50.pdf Size:548K _fairchild_semi

TIGER ELECTRONIC CO.,LTD500V N-Channel MOSFETFQD5N50DESCRIPTIONThese N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche an

9.4. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

April 2000TMQFETQFETQFETQFETFQD5N20 / FQU5N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology

9.5. fqd5n40tf fqd5n40tm fqu5n40tu.pdf Size:730K _fairchild_semi

April 2000TMQFETQFETQFETQFETFQD5N40 / FQU5N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 7.0 pF)This advanced technology

9.6. fqd5n20tf.pdf Size:690K _fairchild_semi

6978 Mosfet Datasheet Pdf

9.7. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi

May 2000TMQFETQFETQFETQFETFQD5N30 / FQU5N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology h

9.8. fqd5n50tf fqu5n50tu.pdf Size:768K _fairchild_semi

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology

9.9. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi

9.10. fqd5n30tf fqd5n30tm.pdf Size:752K _fairchild_semi

6978 Mosfet Board

9.11. fqd5n50c fqd5n50ctf fqd5n50ctm fqd5n50c fqu5n50c fqu5n50ctu.pdf Size:664K _fairchild_semi

6978 Mosfet Motor

October 2008QFETFQD5N50C / FQU5N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially

Datasheet: FDD16AN08_F085, FQPF7P20, FQPF85N06, FQPF8N60C, FDD24AN06L_F085, FQPF8N60CF, FDMS7680, FQPF8N80C, TPC8107, FQPF8N90C, FQPF9N25C, FQPF9N50CF, FQPF9N90C, FQPF9P25, FQS4900, FCI25N60N, FQS4901.

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